ts9001 page 1 ? 2011 touchstone semiconductor, inc. all rights reserved. part internal reference output stage in- connection supply current (na) ts9001-1 yes push-pull ref 600 ts9001-2 yes open-drain ref 600 features ? improved electrical performance over max9117-max9118 ? guaranteed to operate down to +1.6v ? ultra-low supply current: 600na ? internal 1.252v 1% reference ? input voltage range extends 200mv outside- the-rails ? no phase reversal for overdriven inputs ? output stage: push-pull (ts9001-1) open-drain (ts9001-2) ? crowbar-current-free switching ? internal hysteresis for clean switching ? 5-pin sc70 packaging applications 2-cell battery monitoring/management medical instruments threshold detectors/discriminators sensing at ground or supply line ultra-low-power systems mobile communications telemetry and remote systems description the nanopower ts9001-1/2 analog comparators guarantee +1.6v operation, draw very little supply current, and have robust input stages that can tolerate input voltages beyond the power supply. both products are touchstone semiconductor?s first analog comparator products in its ?nanowatt analog? high-performance analog integrated circuits portfolio. the ts9001-1/2 draw 600na of supply current and include an on-board +1.252v1% reference. these comparators are also electrically and form-factor identical to the max9117 and the max9118 family of analog comparators. both comparators offer a 33% improvement in voltage reference initial accuracy and the ts9001-1 offers 73% hi gher output current drive. the ts9001-1?s push-push output drivers were designed to drive 5ma loads from one supply rail to the other supply rail. the ts9001-2?s open-drain output stage make it easy to incorporate this analog comparator into systems t hat operate on different supply voltages. both devices are available in an ultra-small 5-pin sc70 package. 1.6v nano p ower com p arato r with internal reference typical application circuit nanowatt analog and the touc hstone semiconductor logo are registered trademarks of touchst one semiconductor, incorporated.
ts9001 page 2 ts9001ds r1p0 rtfds absolute maximum ratings supply voltage (v cc to v ee ) ............................................ +6v voltage inputs (in+, in-, ref) .... (v ee - 0.3v) to (v cc + 0.3v) output voltage ts9001-1 ................................. (v ee - 0.3v) to (v cc + 0.3v) ts9001-2 ............................................... (v ee - 0.3v) to +6v current into input pins ................................................ 20ma output curr ent ............................................................ 50ma output short-circuit duration ............................................ 10s continuous power dissipation (t a = +70c) 5-pin sc70 (derate 2.5mw/ c above +70c) ....... 200 mw operating temper ature range ...................... - 40c to +85c junction temper ature ................................................ +150c storage temperature rang e ....................... -65c to +150c lead temperature (sol dering, 10s ) ............................... +300 electrical and thermal stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the op erational sections of the specifications is not implied. ex posure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. package/ordering information order number part marking carrier quantity ts9001-1ij5 taf tape & reel 3000 TS9001-2IJ5 tag tape & reel 3000 lead-free program: touchstone semiconductor supp lies only lead-free packaging. please consult touchstone semiconductor for products specified with wider operating temperature ranges.
ts9001 ts9001ds r1p0 page 3 rtfds electrical characteristics: ts9001-1/2 v cc = +5v, v ee = 0v, v in+ = v ref , t a = -40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1 parameter symbol conditions min typ max units supply voltage range v cc inferred from the psrr test t a = t min to t max 1.6 5.5 supply current i cc v cc = 1.6v t a = +25c 0.6 1 a v cc = 5v t a = +25c 0.68 1.30 t a = t min to t max 1.60 in+ voltage range v in+ inferred from the output swing test v ee - 0.2 v cc + 0.2 v input offset voltage v os (note 2) t a = +25c 2 5 mv t a = t min to t max 10 input-referred hysteresis v hb (note 3) 4 mv input bias current i b t a = +25c 0.15 1 na t a = t min to t max 2 power-supply rejection ratio psrr v cc = 1.6v to 5.5v, t a = t min to t max 1 mv/v output-voltage swing high v cc - v oh ts9001-1, v cc = 5v, i source = 5ma t a = +25c 200 300 mv t a = t min to t max 400 ts9001-1, i source = 1ma v cc = 1.6v, t a = +25c 100 150 v cc = 1.6v, t a = t min to t max 200 output-voltage swing low v ol v cc = 5v, i sink = 5ma t a = +25c 110 200 mv t a = t min to t max 300 i sink = 1ma v cc = 1.6v, t a = +25c 50 100 v cc = 1.6v, t a = t min to t max 150 output leakage current i leak ts9001-2 only, v o = 5.5v 0.002 1 a output short-circuit current i sc sourcing, v o = v ee v cc = 5v 60 ma v cc = 1.6v 6 sinking, v o = v cc v cc = 5v 90 v cc = 1.6v 10 high-to-low propagation delay (note 4) t pd - v cc = 1.6v 12 s v cc = 5v 15 low-to-high propagation delay (note 4) t pd+ ts9001-1 only v cc = 1.6v 25 s v cc = 5v 50 ts9001-2 only v cc = 1.6v, r pullup = 100k ? 21 v cc = 5v, r pullup = 100k ? 28 rise time t rise ts9001-1 only, c l = 15pf 3.5 s fall time t fall c l = 15pf 2 s power-up time t on 1.2 ms reference voltage v ref t a = +25c 1.2395 1.252 1.2645 v t a = t min to t max 1.2332 1.2708 reference voltage temperature coefficient tcv ref 40 ppm/c reference output voltage noise e n bw = 10hz to 100khz 0.6 mv rms bw = 10hz to 100khz, c ref = 1nf 0.2 reference line regulation ? v ref / ? v cc v cc = 1.6v to 5.5v 0.1 mv/v reference load regulation ? v ref / ? i out ? i out = 10na 0.2 mv/na note 1: all specifications are 100% tested at t a = +25c. specification lim its over temperature (t a = t min to t max ) are guaranteed by device characterization, not production tested. note 2: v os is defined as the center of the hysteresis band at the input. note 3: the hysteresis-related trip points are def ined by the edges of the hysteresis band and measured with respect to the center of the hysteresis band (i.e., v os ). see figure 2. note 4: the propagation delays are specified with an input overdrive (v overdrive ) of 100mv and an output load capacitance of c l = 15pf. v overdrive is defined above and is beyond the offset voltage and hysteresis of the comparator input. reference voltage error should also be included.
ts9001 page 4 ts9001ds r1p0 rtfds pin functions ts9001-1 ts9001-2 name function sc70-5 1 out comparator output 2 vee negative supply voltage 3 in+ comparator noninverting input 4 ref/in- 1.252v reference output/comparator inverting input ? ref 1.252v reference output 5 vcc positive supply voltage ? in- comparator inverting input block diagrams description of operation guaranteed to operate from +1.6v supplies, the ts9001-1 and the ts9001 -2 analog comparators only draw 600na supply current, feature a robust input stage that can tolerate input voltages 200mv beyond the power supply rails, and include an on- board +1.252v 1% voltage reference. to insure clean output switching behavior, both analog comparators feature 4mv in ternal hysteresis. the ts9001-1?s push-pull output drivers were designed to minimize supply-current surges while driving 5ma loads with rail-to-rail output swings. the open- drain output stage ts9001-2 can be connected to supply voltages above v cc to an absolute maximum of 6v above v ee . where wired-or logic connections are needed, their open-drain output stages make it easy to use this analog comparator. input stage circuitry the robust design of the analog comparators? input stage can accommodate any differential input voltage from v ee - 0.2v to v cc + 0.2v. input bias currents are typically 0.15na so long as the applied input voltage remains between the supply rails. esd protection diodes - connected internally to the supply rails - protect comparator inputs against overvoltage conditions. however, if the applied input voltage exceeds either or both supply rails, an increase in input current can occur when these esd protection diodes start to conduct.
ts9001 ts9001ds r1p0 page 5 rtfds output stage circuitry many conventional analog comparators can draw orders of magnitude higher supply current when switching. because of this behavior, additional power supply bypass capacitance may be required to provide additional charge storage during switching. the design of the ts9001-1?s rail-to-rail output stage implements a technique that virtually eliminates supply-current surges when output transitions occur. the supply-current change as a function of output transiti on frequency exhibited by these analog comparators is very small. material benefits of this attribute to battery-power applications are the increase in operating time and in reducing the size of power-supply filter capacitors. internal voltage reference the ts9001-1/2?s internal +1.252v voltage reference exhibits a typical temperature coefficient of 40ppm/c over the full -40c to +85c temperature range. an equivalent circuit for the reference section is illustrat ed in figure 1. since the output impedance of the voltage reference is typically 200k ? , its output can be bypassed with a low-leakage capacitor and is stable for any capacitive load. an external buffer ? such as the ts1001 ? can be used to buffer the voltage reference output for higher output current drive or to reduce reference output impedance. applications information low-voltage, low-power operation because they were designed specifically for low- power, battery-operated applications, the ts9001- 1/2 comparators are an excellent choice. under nominal conditions, approximate operating times for this analog comparator fam ily is illustrated in table 1 for a number of battery types and their corresponding charge capacities. internal hysteresis as a result of circuit noise or unintended parasitic feedback, many analog compar ators often break into oscillation within their li near region of operation especially when the applied differential input voltage approaches 0v (zero volt). externally-introduced hysteresis is a well-established technique to stabilizing analog comparator behavior and requires external components. as shown in figure 2, adding comparator hysteresis creates two trip points: v thr (for the rising input voltage) and v thf (for the falling input voltage). the hysteresis band (v hb ) is defined as the voltage difference between the two trip points. when a comparator?s input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input table 1: battery applications using the ts9001 battery type rechargeable v fresh (v) v end-of-life (v) capacity, aa size (ma-h) ts9001/tsm9003 operating time (hrs) alkaline (2 cells) no 3.0 1.8 2000 2.5 x 10 6 nickel-cadmium (2 cells) yes 2.4 1.8 750 937,500 lithium-ion (1 cell) yes 3.5 2.7 1000 1.25 x 10 6 nickel-metal- hydride (2 cells) yes 2.4 1.8 1000 1.25 x 10 6 figure 1 : ts9001?s internal v ref output e q uivalent circui t
ts9001 page 6 ts9001ds r1p0 rtfds out of the region where osc illation occurs. figure 2 illustrates the case in which an in- input is a fixed voltage and an in+ is varied. if the input signals were reversed, the figure would be the same with an inverted output. to save co st and external pcb area, an internal 4mv hysteresis circuit was added to the ts9001-1/2. adding hysteresis to the ts9001-1 push-pull output option the ts9001-1 exhibits an internal hysteresis band (v hysb ) of 4mv. additional hysteresis can be generated with three external resistors using positive feedback as shown in figure 3. unfortunately, this method also reduces the hysteresis response time. the procedure to calculate the resistor values for the ts9001-1 is as follows: 1) setting r2. as the leakage current at the in pin is less than 2na, the current through r2 should be at least 0.2 a to minimize offset voltage errors caused by the input leakage current. the current through r2 at the trip point is (v ref - v out )/r2. in solving for r2, there are two formulas ? one each for the two possible output states: r2 = v ref /i r2 or r2 = (v cc - v ref )/i r2 from the results of the two formulae, the smaller of the two result ing resistor values is chosen. for example, when using the ts9001-1 (v ref = 1.252v) at a v cc = 3.3v and if i r2 = 0.2 a is chosen, then the formulae above produce two resistor values: 6.26m ? and 10.24m ? - the 6.2m ? standard value for r2 is selected. 2) next, the desired hysteresis band (v hysb ) is set. in this example, v hysb is set to 100mv. 3) resistor r1 is calculated according to the following equation: r1 = r2 x (v hysb /v cc ) and substituting the values selected in 1) and 2) above yields: r1 = 6.2m ? x (100mv/3.3v) = 187.88k ? . the 187k ? standard value for r1 is chosen. 4) the trip point for v in rising (v thr ) is chosen such that v thr > v ref x (r1 + r2)/r2 (v thf is the trip point for v in falling). this is the threshold voltage at which the comparator switches its output from low to high as v in rises above the trip point. in this example, v thr is set to 3v. 5) with the v thr from step 4 above, resistor r3 is then computed as follows: r3 = 1/[v thr /(v ref x r1) - (1/r1) - (1/r2)] r3 = 1/[3v/(1.252v x 187k ? ) - (1/187k ? ) - (1/6.2m ? )] = 136.9k ? in this example, a 137k ? , 1% standard value resistor is selected for r3.. figure 3 : using three resistors introduces additional hysteresis in the ts9001-1. fi g ure 2 : ts9001 threshold h y steresis band
ts9001 ts9001ds r1p0 page 7 rtfds 6) the last step is to verify the trip voltages and hysteresis band using the standard resistance values: for v in rising: v thr = v ref x r1 [(1/r1) + (1/r2) + (1/r3)] = 3v for v in falling: v thf = v thr - (r1 x v cc /r2) = 2.9v and hysteresis band = v thr ? v thf = 100mv adding hysteresis to the ts9001-2 open-drain option the ts9001-2 has open-drain output and requires an external pull-up resistor to v cc as shown in figure 4. additional hysteresis can be generated using positive feedback; however, the formulae differ slightly from those of t he push-pull option ts9001-1. the procedure to calculate the resistor values for the ts9001-2 is as follows: 1) as in the previous section, resistor r2 is chosen according to the formulae: r2 = v ref /0.2a or r2 = (v cc - v ref )/0.2 a - r4 where the smaller of the two resulting resistor values is the best starting value. 2) as before, the desired hysteresis band (v hysb ) is set to 100mv. 3) next, resistor r1 is then computed according to the following equation: r1 = (r2 + r4) x (v hysb /v cc ) 4) the trip point for v in rising (v thr ) is chosen (again, remember that v thf is the trip point for v in falling). this is the threshold voltage at which the comparator switches its output from low to high as v in rises above the trip point. 5) with the v thr from step 4 above, resistor r3 is computed as follows: r3 = 1/[v thr /(v ref x r1) - (1/r1) - (1/r2)] 6) as before, the last st ep is to verify the trip voltages and hysteresis band with the standard resistor values used in the circuit: for v in rising: v thr = v ref x r1 x (1/r1+1/r2+1/r3) for v in falling: v thf = v ref x r1 x (1/r1+1/r3+1/(r2+r4)) -(r1/(r2+r4)) x v cc and hysteresis band is given by v thr - v thf pc board layout and power-supply bypassing while power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1uf bypass capacitors close to the device?s power supply pins when the power supply impedance is high, the power supply leads are long, or there is excessive noise on the power supply traces. to reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as possible. also recommended are a ground plane and surface mount resistors and capacitors. figure 4 : using four resistors introduces additional hysteresis in the ts9001-2.
ts9001 page 8 ts9001ds r1p0 rtfds package outline drawing 5-pin sc70 package outline drawing (n.b., drawings are not to scale) information furnished by touchstone semicondu ctor is believed to be accurate and reli able. however, touchstone semiconductor do es not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result fro m its use, and all information provided by touchstone semic onductor and its suppliers is provided on an as is basis, without warranty of any kind. touchstone semiconductor reserves the right to change product specificati ons and product descriptions at any time without any a dvance notice. no license is granted by implication or otherwise under any paten t or patent rights of touchstone semiconductor. touchstone sem iconducto r assumes no liability for applications assistanc e or customer product design. customers are responsible for their products and a pplications using touchstone semiconductor components. to minimize the risk associ ated with customer products and applications, customers should provide adequate design and operating safeguards. trademarks and registered tr ademarks are the property of their respective owners. 13 4 5 0.65 typ. 2 1.30 typ. 0.15 - 0.30 1.80 - 2.20 1.15 - 1.35 0.26 - 0.46 0.275 - 0.575 2 1 lead frame thickness gauge plane 1 2 notes: does not include mold flash, protrusions or gate burrs. does not include inter-lead flash or protrusions. die is facing up for molding. die is facing down for trim/form. 3. 5. controlling dimensions in milimiters. all side 1.80 - 2.40 0.00 - 0.10 1.00 max 0.10 - 0.18 0.15 typ. 8o - 12o 0o - 8o 0.800 ? 0.925 0.40 ? 0.55 4 all specification comply to jedec spec mo-203 aa 6. all specifications refer to jedec mo-203 aa 7. lead span/stand off height/coplanari ty are considered as special characteristic 0.10 max
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